* : The 2SA1319/2SC3332 are classified by 100mA h
Features
Switching Test Circuit
Electrical Characteristics at Ta = 25˚C
( ) : 2SA1319
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Ordering number:ENN1334D
C
C
E
C
C
C
J
S
C
E
D
u
o
o
m
o
o
o
o t
o
m
C
n
· Hgih breakdown voltage.
· Excellent h
· Wide ASO and highly resistant to breakdown.
· Adoption of MBIT process.
e l l
e l l
e l l
e l l
e l l
e l l
t i
a r
t t i
t c
C
e t
c
c
t c
t c
t c
t c
r e
o i
g
r u
o t
o t
- r
e
r o
r o
r o
r o
n
e r
C
o t
- r
- r
T
T
u
o t
o t
C
C
i D
C
t n
B -
e
e
o t
r u
r u
m
u
B -
E -
s s
m
a
G
o t
f f
p
PW=20 s
D.C. 1%
s
e r
e r
p
a
m
p i
a
INPUT
e
f f
e
C
e
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
s
t n
t n
n i
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
a r
t t i
t a
e
a r
r u
V
C
r e
o i
u t
P (
l o
r u
V
u t
e r
R
h E
P
P
FE
n
l o
a t
e r
a
e r
e r
F
V
u
t n
a
a
n
s l
a t
l o
g
a r
a r
t n
k
e
) e
linearity.
g
a t
m
m
50
e
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
g
t e
t e
e
V R
r e
r e
--5V
1
0
I B1
0
SANYO Electric Co.,Ltd. Semiconductor Company
R
o t
R B
I B2
100 F
2
0
(For PNP, the polarity is reversed.)
20I B1 =--20I B2 =I C =300mA
0
+
1
4
0
o t
S
470 F
2
8
0
S
S
+
V
V
V
100V
I
I
h E
h E
y
T
y
C
E
I P
C
C
E
P C
FE
F 1
F 2
m
I C
C
m
j T
s
OUTPUT
B
B
B
E
B
g t
2
333
b
b
R L
O
O
O
O
O
as follows :
0
l o
l o
0
o t
T
High-Voltage Switching Applications
4
V B
V B
V E
V E
0
C
E
C
C
0
83002TN (KT)/71598HA (KT)/3207KI/N257KI/3135KI/O183KI, TS No.1334-1/4
=
=
=
=
– (
– (
– (
– (
4 )
1 )
5 )
5 )
V
2
V
V
0
I ,
I ,
I ,
V
C 0
C
C
I ,
=
Package Dimensions
unit:mm
2003B
=
=
E 0
– (
– (
=
1 )
1 )
0
0
C
0
m
o
m
C
A
PNP/NPN Epitaxial Planar Silicon Transistors
n
A
o
d
n
t i
d
o i
t i
n
o i
s
n
s
2SA1319/2SC3332
0.45
0.45
0.5
[2SA1319/2SC3332]
1.3
1
5.0
4.0
2 3
1.3
m
1
n i
0
8
* 0
0
4.0
R
0.44
Continued on next page.
t a
R
y t
n i
t a
p
–
g
n i
5
s
5
g
s
o t
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
– (
– (
– (
– (
– (
– (
m
+
4
1 )
1 )
– (
0 )
1 )
a
0 )
0 )
7
1
1
0
x
8
6
0
5
5
* 0
6 )
7 .
5 .
1 .
1 .
0
0
0
0
0
U
m
U
˚C
˚C
µ
µ
V
V
V
A
A
n
n
W
A
A
t i
t i