2sc5009-t1 ETC-unknow, 2sc5009-t1 Datasheet

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2sc5009-t1

Manufacturer Part Number
2sc5009-t1
Description
Silicon Epitaxial Transistor Pins Ultra Super Mini Mold
Manufacturer
ETC-unknow
Datasheet

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2SC5009-T1
Manufacturer:
NEC
Quantity:
158 968
Document No. P10388EJ2V0DS00 (2nd edition)
(Previous No. TD-2430)
Date Published July 1995 P
Printed in Japan
DESCRIPTION
in low noise and small signal amplifiers from VHF band to L band. Low
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (NEST3 process) which is an NEC
proprietary new fabrication technique.
FEATURES
• Low Voltage Use.
• High f
• Low C
• Low NF
• High |S
• Ultra Super Mini Mold Package.
ORDERING INFORMATION
* Please contact with responsible NEC person, if you require evaluation
ABSOLUTE MAXIMUM RATINGS (T
2SC5009
2SC5009-T1
sample. Unit sample quantity shall be 50 pcs.
The 2SC5009 is an NPN epitaxial silicon transistor designed for use
PART
NUMBER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
T
re
21e
|
2
: 12.0 GHz TYP. (@ V
: 0.3 pF TYP. (@ V
: 2.5 dB TYP. (@ V
: 8.5 dB TYP. (@ V
50 pcs./Unit
3 kpcs./Reel
QUANTITY
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
Embossed tape 8 mm wide.
Pin 3 (Collector) face to perforation side
of the tape.
CE
CE
CE
= 3 V, I
= 3 V, I
= 3 V, I
CE
V
V
V
T
P
CBO
CEO
I
T
EBO
= 3 V, I
C
stg
PACKING STYLE
T
j
DATA SHEET
A
E
C
C
= 25 ˚C)
= 0, f = 1 MHz)
= 3 mA, f = 2 GHz)
= 5 mA, f = 2 GHz)
C
–65 to +150
= 5 mA, f = 2 GHz)
150
10
60
9
6
2
mW
mA
˚C
˚C
V
V
V
SILICON TRANSISTOR
PACKAGE DIMENSIONS
2
1
in milimeters
2SC5009
1. Emitter
2. Base
3. Collector
1.6± 0.1
0.8± 0.1
©
3
1993

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2sc5009-t1 Summary of contents

Page 1

... Ultra Super Mini Mold Package. ORDERING INFORMATION PART QUANTITY NUMBER 2SC5009 50 pcs./Unit 2SC5009-T1 3 kpcs./Reel * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. ABSOLUTE MAXIMUM RATINGS (T Collector to Base Voltage Collector to Emitter Voltage ...

Page 2

... ˚C) A MIN. TYP. MAX. UNIT 0 150 12.0 GHz 0.3 0 7.0 8.5 dB 2.5 4 2SC5009 TEST CONDITIONS mA mA GHz MHz ...

Page 3

... A 100 INSERTION POWER GAIN vs. COLLECTOR CURRENT 0.5 1 2SC5009 0.5 1 – Base to Emitter Voltage – CURRENT GAIN vs. COLLECTOR CURRENT – Collector Current – GHz ...

Page 4

... Collector Current – FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 5 2.0 1.0 0.5 0.2 0 – Collector to Base Voltage – MAXIMUM AVAILABLE GAIN, INSERTION POWER GAIN vs. FREQUENCY 0.1 0.2 f – Frequency – GHz 50 2SC5009 MAG 2 S 21e 0 ...

Page 5

... S 22 MAG ANG .979 –6.6 .950 –12.5 .904 –17.8 .857 –22.2 .810 –25.5 .768 –28.4 .728 –30.7 .693 –32.5 .662 –34.4 .636 –35.6 .612 –36.9 .590 – ...

Page 6

... S 22 MAG ANG .990 –4.8 .979 –9.4 .956 –13.9 .933 –18.1 .903 –21.9 .875 –25.5 .842 –28.8 .810 –31.8 .776 –34.8 .745 –37.0 .715 –39.3 .684 – ...

Page 7

... S 22 MAG ANG .976 –6.2 .956 –12.0 .922 –17.5 .883 –22.4 .837 –26.5 .793 –30.1 .752 –33.3 .710 –35.9 .673 –38.3 .639 –40.0 .609 –41.6 .583 – ...

Page 8

... S 22 MAG ANG .994 –3.5 .995 –6.8 .984 –10.2 .978 –13.7 .967 –16.9 .958 –20.2 .944 –23.4 .927 –26.6 .910 –30.1 .887 –33.2 .865 –36.2 .837 – ...

Page 9

... [MEMO] 2SC5009 9 ...

Page 10

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 10 2SC5009 M4 94.11 ...

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