2sc5193-t2 ETC-unknow, 2sc5193-t2 Datasheet - Page 2
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2sc5193-t2
Manufacturer Part Number
2sc5193-t2
Description
Microwave Noise Amplifier Silicon Epitaxial Transistor Compact Mini Mold
Manufacturer
ETC-unknow
Datasheet
1.2SC5193-T2.pdf
(12 pages)
ELECTRICAL CHARACTERISTICS (T
Notes 1. Pulse Measurement: PW
h
2
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Collector Capacitance
FE
Marking
Classification
Rank
h
FE
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
PARAMETER
80 to 160
T88
FB
SYMBOL
S
S
I
I
h
NF
NF
C
CBO
EBO
350
f
f
21e
21e
FE
T
T
re
2
2
s, Duty cycle
A
V
V
V
V
V
V
V
V
V
V
= 25
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
= 1 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 3 V, I
= 1 V, I
= 3 V, I
= 1 V, I
= 3 V, I
= 1 V, I
C)
E
C
C
C
C
C
C
C
C
E
= 0
= 0
= 3 mA
= 3 mA, f = 2.0 GHz
= 20 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
= 7 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
= 20 mA, f = 2.0 GHz
= 0, f = 1.0 MHz
CONDITION
2 %, Pulsed
Note 1
Note 2
MIN.
2.5
80
4
TYP.
0.75
3.5
6.5
1.7
1.5
4.5
9
MAX.
0.85
100
100
160
2.5
2SC5193
UNIT
GHz
GHz
dB
dB
dB
nA
nA
dB
pF