2sc5182-t2 California Eastern Laboratories, 2sc5182-t2 Datasheet

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2sc5182-t2

Manufacturer Part Number
2sc5182-t2
Description
Surface Mount Npn Silicon High Frequency Transistor
Manufacturer
California Eastern Laboratories
Datasheet
1.2SC5182-T2.pdf (22 pages)
FEATURES
• LOW NOISE: 1.3 dB AT 2.0 GHz
• LOW VOLTAGE OPERATION
• EASY TO MATCH
• HIGH GAIN BANDWIDTH PRODUCT: f
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
DESCRIPTION
NEC's NE687 series of NPN epitaxial silicon transistors are
designed for low cost, low noise applications. Excellent perfor-
mance at low voltage/low current makes this series an ideal
choice for portable wireless applications at 1.6, 1.9 and 2.4
GHz. The NE687 die is available in six different low cost plastic
surface mount package styles.
Notes:
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
ELECTRICAL CHARACTERISTICS
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
R
R
MOUNT PACKAGE STYLES
NF
NF
|S
|S
C
I
I
TH(J-A)
TH(J-C)
h
CBO
EBO
P
21e
21e
f
f
RE 4
FE
T
T
MIN
MIN
T
|
|
2
2
Gain Bandwidth Product at
V
Gain Bandwidth Product at
V
Minimum Noise Figure at
V
Minimum Noise Figure at
V
Insertion Power Gain at
V
Insertion Power Gain at
V
Forward Current Gain
V
Collector Cutoff Current
at V
Emitter Cutoff Current
at V
Feedback Capacitance at
V
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
CE
CE
CE
CE
CE
CE
CE
CB
EIAJ
CB
EB
= 2 V, I
= 1 V, I
= 2 V, I
= 1 V, I
= 2V, I
= 1V, I
= 2 V, I
= 2 V, I
= 1 V, I
= 5 V, I
PACKAGE OUTLINE
2
REGISTERED NUMBER
PART NUMBER
C
C
C
C
C
C
C
E
=20 mA, f = 2.0 GHz
=10 mA, f = 2.0 GHz
= 0 mA, f = 1 MHz
= 20 mA, f = 2.0 GHz
= 10 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
= 3 mA, f = 2.0 GHz
= 20 mA
C
E
= 0 mA
= 0 mA
HIGH FREQUENCY TRANSISTOR
SURFACE MOUNT NPN SILICON
3
at
1
T
of 13 GHz
°C/W
°C/W
GHz
GHz
mW
dB
dB
dB
dB
nA
nA
pF
(T
A
= 25°C)
7.5
10
70
8
8
NE68718
2SC5185
1.3
1.3
0.3
18
13
11
11
9
140
100
100
833
2.0
2.0
0.6
90
8.5
70
3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.
4. The emitter terminal should be connected to the ground terminal
9
7
6
18 (SOT 343 STYLE)
30 (SOT 323 STYLE)
39 (SOT 143 STYLE)
NE68719
2SC5186
of the 3 terminal capacitance bridge.
1.3
1.3
7.5
0.4
19
11
10
9
1250
140
100
100
2.0
2.0
0.8
90
California Eastern Laboratories
70
9
7
7
6
NE68730
2SC5184
1.3
1.3
8.5
7.5
0.4
30
11
9
140
100
100
833
2.0
2.0
0.8
90
19 (3 PIN ULTRA SUPER
33 (SOT 23 STYLE)
39R (SOT 143R STYLE)
70
9
7
7
6
NE68733
2SC5182
NE687
SERIES
MINI MOLD)
1.3
1.3
8.5
7.5
0.4
33
12
10
140
100
100
625
2.0
2.0
0.8
90
NE68739/39R
2SC5183/83R
7.5
7.5
70
7
7
39/39R
8.5
1.3
1.3
8.5
0.4
10
10
140
100
100
625
2.0
2.0
0.8
90

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2sc5182-t2 Summary of contents

Page 1

... Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%. 4. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. NE687 SERIES 19 (3 PIN ULTRA SUPER MINI MOLD) 33 (SOT 23 STYLE) 39R (SOT 143R STYLE) NE68730 NE68733 NE68739/39R 2SC5184 2SC5182 2SC5183/83R 7 ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C T Operating Junction J Temperature T Storage Temperature STG Note: 1. Operation in ...

Page 3

TYPICAL PERFORMANCE CURVES NE68718, NE68730 D.C. POWER DERATING CURVE 150 100 100 Ambient Temperature, T NE68733, NE68739 D.C. POWER DERATING CURVE 150 100 100 Ambient Temperature, T (TA = 25°) ...

Page 4

NE687 SERIES TYPICAL PERFORMANCE CURVES NE68718 INSERTION GAIN vs. COLLECTOR CURRENT Collector Current D.C. CURRENT GAIN vs. COLLECTOR CURRENT 500 200 100 ...

Page 5

TYPICAL SCATTERING PARAMETERS GHz 1 GHz 0.1 GHz -.2 -.4 -.6 -1.5 NE68718 -. 1 ...

Page 6

NE687 SERIES TYPICAL SCATTERING PARAMETERS NE68718 FREQUENCY S 11 GHz MAG ANG 0.1 0.745 -19.300 0.4 0.501 -72.400 0.8 0.306 -114.500 1.0 0.257 -131.700 1.5 0.202 -168.800 2.0 0.181 160.000 ...

Page 7

TYPICAL SCATTERING PARAMETERS GHz 1 0.1 GHz 5 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68719 ...

Page 8

TYPICAL SCATTERING PARAMETERS NE68719 FREQUENCY S 11 GHz MAG ANG 0.1 0.795 -18.000 0.4 0.577 -66.300 0.8 0.364 -106.100 1.0 0.303 -120.700 1.5 0.224 -151.800 2.0 0.187 -178.500 2.5 0.171 ...

Page 9

TYPICAL SCATTERING PARAMETERS GHz 1 0.1 GHz 5 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68730 V = 1.0 V, ...

Page 10

TYPICAL SCATTERING PARAMETERS NE68730 FREQUENCY S 11 GHz MAG ANG 0.1 0.850 -12.800 0.4 0.678 -49.700 0.8 0.450 -80.500 1.0 0.375 -91.900 1.5 0.256 -114.600 2.0 0.187 -135.300 2.5 0.141 ...

Page 11

TYPICAL SCATTERING PARAMETERS GHz 1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68733 1.0 ...

Page 12

NE687 SERIES TYPICAL SCATTERING PARAMETERS NE68733 FREQUENCY S 11 GHz MAG ANG 0.1 0.860 -13.200 0.4 0.653 -51.000 0.8 0.403 -82.900 1.0 0.324 -95.500 1.5 0.198 -127.200 2.0 0.141 -164.900 ...

Page 13

TYPICAL SCATTERING PARAMETERS GHz . 1 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68739 1.0 mA ...

Page 14

TYPICAL SCATTERING PARAMETERS NE68739 FREQUENCY S 11 GHz MAG ANG 0.1 0.877 -12.300 0.4 0.717 -48.900 0.8 0.484 -87.400 1.0 0.404 -104.800 1.5 0.299 -147.400 2.0 0.301 176.200 2.5 0.340 ...

Page 15

NE68700 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 8.0e-17 MJC BF 128 XCJC NF 1.0 CJS VAF 17 VJS IKF 0.18 MJS ISE 3.3e- 1. 9.05 XTF NR 1.05 VTF VAR 4.3 ...

Page 16

NE687 SERIES NE68718 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 8.0e-17 MJC BF 128 XCJC NF 1.0 CJS VAF 17 VJS IKF 0.18 MJS ISE 3.3e- 1. 9.05 XTF NR 1.05 ...

Page 17

NE68719 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 8.0e-17 MJC BF 128 XCJC NF 1.0 CJS VAF 17 VJS IKF 0.18 MJS ISE 3.3e- 1. 9.05 XTF NR 1.05 VTF VAR ...

Page 18

NE68730 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 8e-17 MJC BF 128 XCJC NF 1 CJS VAF 17 VJS IKF 0.18 MJS ISE 3.3e- 1. 9.05 XTF NR 1.05 VTF VAR ...

Page 19

NE68733 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 8e-17 MJC BF 128 XCJC NF 1 CJS VAF 17 VJS IKF 0.18 MJS ISE 3.3e- 1. 9.05 XTF NR 1.05 VTF VAR ...

Page 20

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 18 (SOT-343) 2.1 ± 0.2 1.25 ± 0 2.0 ± 0.2 0.65 0.65 0.60 0. +0.10 0.4 -0.05 0.3 0.9 ± 0 0.1 PACKAGE OUTLINE 19 ...

Page 21

... CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE +0 ...

Page 22

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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