2sc5814 ISAHAYA ELECTRONICS CORPORRATION, 2sc5814 Datasheet - Page 2

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2sc5814

Manufacturer Part Number
2sc5814
Description
For Low Frequency Amplify Application Silicon Npn Epitaxial Type Description
Manufacturer
ISAHAYA ELECTRONICS CORPORRATION
Datasheet

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ELECTRICAL CHARACTERISTICS (Ta=25℃)
* It shows h
V
I
I
V
f
Cob
SYMBOL
CBO
EBO
T
(BR)CEO
FE
FE
CE(sat)
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E saturation voltage
Gain band width product
Collector output capacitance
FE
classification in right table.
PARAMETER
ISAHAYA ELECTRONICS CORPORATION
I
V
V
V
V
I
V
V
C
C
CB
EB
CE
CE
=30mA,I
CE
CB
2SC5814,2SC5815,2SC5816,2SC5817
=100uA,R
=4V,I
=6V,I
=6V,I
=6V,I
=60V,I
=6V,I
C
C
E
E
C
=1mA
=0.1mA
=-10mA
=0mA,f=1MHz
=0mA
B
E
=1.5mA
BE
=0mA
TEST CONDITIONS
=∞
Marking
Marking
Item
Item
FE
FE
120~270
150~300
For Low Frequency Amplify Application
EQ
EE
Q
E
Silicon NPN Epitaxial Type
180~390
250~500
MIN
120
60
70
ER
EF
R
F
LIMITS
TYP
200
1.5
〈Transistor〉
180~390
MAX
560
0.5
0.5
0.3
ES
S
UNIT
MHz
μA
μA
pF
V
V
-
-

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