2sc5626 ISAHAYA ELECTRONICS CORPORRATION, 2sc5626 Datasheet
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2sc5626
Manufacturer Part Number
2sc5626
Description
Transistor Npn Smd Type
Manufacturer
ISAHAYA ELECTRONICS CORPORRATION
Datasheet
1.2SC5626.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2sc5626-T111-1
Manufacturer:
ISAHAYA
Quantity:
20 000
SY MBOL
SY MBOL
V
V
V
I
I
h
V
f
C
I
P
T
T
T
CBO
FE
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
EBO
CE(sat)
ob
j
stg
C
C
CBO
EBO
CEO
DESCURIPTION
Mitsubishi 2SC5626 is a super mini packege resin sealed
silicon NPN epitaxial ty pe transistor. It is designed f or high
f requency amplif y application.
FEATURE
APPLICATION
MAXIMUM RATINGS (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
・Super mini package f or easy mounting
・High gain band width product
Small ty pe machine high f requency amplif y
application
Gain band width product
Collector output capacitance
Storage temprature
C to B break down v oltage
C to E break down v oltage
E to B break down v oltage
Collector cut cf f current
Emitter cut of f current
DC f orward current gain
C to E Saturation v oltage
Collector to Base v oltage
Emitter to Base v oltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
PARAMETER
PARAMETER
ISAHAYA ELECTRONICS
V
V
V
I
V
V
I
I
I
CB
EB
CE
C
CE
CB
C
C
C
=10mA, I
-55to+150
=50μ A, I
=100μ A, R
=50μ A, I
=20V, I
=3V, I
=10V, I
=5V, I
=6V, I
RATINGS
+150
150
50
30
20
4
C
E
E
TEST CONDITIONS
E
=0
C
=-10mA
=0, f =1MHz
B
=0
=5mA
C
E
=1mA
=0mA
=0mA
BE
=∞
UNIT
mW
mA
℃
℃
V
V
V
Silicon NPN Epitaxial Type (Super Mini type)
For High Frequency Amplify Application
1 : BASE
CORPORATION
2 : EMITTER
3 : COLLECTOR
2.0
0.9
TERMINAL CONNECTOR
1.30
0.65
0.65
0.7
OUTLINE DRAWING
0~0.1
600
MIN
30
20
4
50
0.425
1
2
1.25
2.1
LIMITS
JEDEC : -
JEITA : SC-70
1100
TY P
148
1.2
0.1
TYPE NAME
0.425
2SC5626
3
S
MARKING
〈Transistor〉
0.3
0.15
MAX
0.3
0.5
0.5
1.5
Unit:mm
W
μ A
μ A
UNIT
MHz
pF
V
V
V
V