2n3735csm4 Semelab Group, 2n3735csm4 Datasheet - Page 2
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2n3735csm4
Manufacturer Part Number
2n3735csm4
Description
Npn Silicon Annular Transistors
Manufacturer
Semelab Group
Datasheet
1.2N3735CSM4.pdf
(2 pages)
ELECTRICAL CHARACTERISTICS
1) Pulse test : Pulse Width# 300
Semelab plc.
BV
BV
BV
I
I
h
V
V
C
C
h
t
t
t
t
Q
CEX
BL
d
r
s
f
FE
fe
CE(SAT)
BE(SAT)
ob
ib
T
CEO
CBO
EBO
OFF CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Parameter
ON CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
DC Current Gain
Collector- Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
High Frequency Current Gain
Delay Time
Rise Time
Storage Time
Fall Time
Total Control Charge
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
1
m
s , Duty Cycle # 2%
1
(T
1
A
= 25°C unless otherwise stated)
Website:
1
I
I
I
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
I
V
I
I
V
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
C
CE
CE
CB
BE
CE
CC
CC
CC
= 10
Test Conditions
= 10mA
= 10
= 10mA
= 150mA
= 500mA
= 1A
= 10mA
= 150mA
= 500mA
= 1A
= 10mA
= 150mA
= 500mA
= 1A
= 1A
= 1A
= - I
http://www.semelab.co.uk
= 0.5V
= 40V
= 40V
= 10V
= 10V
= 30V
= 30V
= 30V
m
m
B2
A
A
= 100mA
I
I
I
V
T
V
V
V
V
V
I
I
I
I
I
I
I
I
I
f = 100KH
I
f = 100KH
I
f = 100MH
V
I
I
I
B
E
C
B
B
B
B
B
B
B
B
E
C
C
B1
C
B
A
EB
EB
CE
CE
CE
CE
BE(off)
= 0
= 0
= 0
= 1mA
= 15mA
= 50mA
= 100mA
= 1mA
= 15mA
= 50mA
= 100mA
= 0
= 0
= 50mA
= 1A
= 100mA
= 100
= 100mA
= 2
= 2
= 1V
= 1V
= 1V
= 1.5V
= 2V
°
C
Z
Z
Z
Min.
0.9
2.5
50
75
35
40
35
20
5
2N3735CSM4
Typ.
Max. Unit
0.20
0.3
0.2
0.3
0.5
0.9
0.8
1.0
1.2
1.4
9.0
20
80
80
40
30
30
10
8
Prelim. 6/00
nC
m
pF
ns
—
—
V
V
V
A