2n3440c3 Semelab Group, 2n3440c3 Datasheet - Page 2
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2n3440c3
Manufacturer Part Number
2n3440c3
Description
Silicon Planar Epitaxial Npn Transistor 2n3440c3
Manufacturer
Semelab Group
Datasheet
1.2N3440C3.pdf
(3 pages)
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N3440C3
Notes
Notes
Notes
Notes
(1)
Semelab Limited
Semelab Limited
Semelab Limited
Semelab Limited
Telephone +44 (0) 1455 556565
ELECTRICAL CHARACTERISTICS
Symbols
I CEO
I CBO
I CEX
I EBO
V CE(sat)
V BE(sat)
h FE
DYNAMIC CHARACTERISTICS
h fe
| h fe |
C obo
C ibo
t on
t off
Pulse Width ≤ 300us, δ ≤ 2%
(1)
(1)
(1)
Parameters
Collector Cut-Off Current
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Forward-current transfer
ratio
Small signal forward-current
transfer ratio
Magnitude of Common-
Emitter Small-Signal Short-
Circuit forward Current,
Transfer Ratio
Output Capacitance
Input Capacitance
Turn-On Time
Turn-Off Time
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
(T A = 25°C unless otherwise stated)
Test Conditions
V CE = 200V
V CB = 300V
V CB = 250V
V CE = 300V
V EB = 7V
I C = 50mA
I C = 50mA
I C = 0.2mA
I C = 2mA
I C = 20mA
I C = 5mA
f = 1.0KHz
I C = 10mA
f = 5MHz
V CB = 10V
f = 1.0MHz
V EB = 5V
f = 1.0MHz
I C = 20mA
I B1 = 2mA
I C = 20mA
I B1 = - I B2 = 2mA
Email:
sales@semelab-tt.com
I B = 0
I E = 0
I E = 0
T A = 150°C
V BE = -1.5V
I C = 0
I B = 4mA
I B = 4mA
V CE = 10V
V CE = 10V
V CE = 10V
T A = -55°C
V CE = 10V
V CE = 10V
I E = 0
I C = 0
V CC = 200V
V CC = 200V
Website:
http://www.semelab-tt.com
Min.
10
30
40
15
25
3
Typ
Max.
Document Number 8877
160
0.5
1.3
1.0
10
10
15
10
75
10
2
5
2
5
Units
Page 2 of 3
MHz
µA
pF
pF
µs
V
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Issue 1