zumt817 Diodes, Inc., zumt817 Datasheet
zumt817
Manufacturer Part Number
zumt817
Description
Sot323 Npn Silicon Planar Medium Power Transistors
Manufacturer
Diodes, Inc.
Datasheet
1.ZUMT817.pdf
(1 pages)
SOT323 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – FEBRUARY 1999
PARTMARKING DETAILS
COMPLEMENTARY TYPES
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward
Current Transfer Ratio
Transition
Frequency
Collector-base
Capacitance
-25
-40
amb
=25°C
SYMBOL
I
I
V
V
h
f
C
CBO
EBO
T
FE
CE(sat)
BE(on)
obo
ZUMT817-25 -
ZUMT817-40 -
ZUMT817-25 - ZUMT807-25
ZUMT817-40 - ZUMT807-40– T7
MIN.
100
40
160
250
TYP.
200
5.0
amb
T7
T23
= 25°C unless otherwise stated).
s . Duty cycle
MAX. UNIT CONDITIONS.
0.1
5
10
700
1.2
600
400
600
SYMBOL
V
V
V
I
I
I
I
P
T
CM
C
B
BM
tot
j
CBO
CEO
EBO
:T
mV
V
MHz
pF
stg
A
A
A
V
V
V
I
I
I
I
I
I
I
f=35MHz
I
f=1MHz
2%
C
C
C
C
C
C
C
E
CB
CB
EB
=I
=500mA, I
=500mA, V
=100mA, V
=500mA, V
=100mA, V
=100mA, V
=10mA, V
=20V, I
=20V, I
=5V, I
e
=0, V
-55 to +150
VALUE
ZUMT817-25
ZUMT817-40
500
100
200
330
C
50
45
CB
5
1
=0
E
E
=0
=0, T
=10V
CE
B
CE
CE
CE
CE
CE
=50mA*
=5V
=1V*
=1V*
=1V*
=1V*
=1V*
amb
=150°C
UNIT
mW
mA
mA
mA
°C
V
V
V
A
Related parts for zumt817
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
