zumt860c Diodes, Inc., zumt860c Datasheet

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zumt860c

Manufacturer Part Number
zumt860c
Description
Sot323 Pnp Silicon Planar General Purpose Transistors
Manufacturer
Diodes, Inc.
Datasheet
1.ZUMT860C.pdf (3 pages)
SOT323 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 1 - DECEMBER 1998
Partmarking Detail:
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
* Collector-Emitter Saturation Voltage at I
operating point I
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Power Dissipation at T
Operating and Storage
Temperature Range
PARAMETER
Collector Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Voltage
C
= 11mA, V
amb
=25°C
SYMBOL MIN.
V
V
V
CBO
CE(sat)
BE(sat)
BE
CE
= 1V at constant base current.
ZUMT860B T2B
ZUMT860C T22
-580
V
V
I
I
I
P
T
V
V
SYMBOL
C
EM
BM
tot
j
CBO
CES
CEO
EBO
:T
C
stg
= 10mA for the characteristics going through the
amb
TYP.
-75
-250
-300
-700
-850
-650
= 25°C unless otherwise stated).
MAX.
-15
-4
-250
-650
-600
-750
-820
-55 to +150
UNIT
nA
mV
mV
mV
mV
mV
VALUE
A
-100
-200
-200
330
-50
-50
-45
-5
ZUMT860B
ZUMT860C
CONDITIONS.
V
V
I
I
I
I
I
I
I
C
C
C
C
C
C
C
CB
CB
=-10mA, I
=-100mA, I
=-10mA*
=-10mA ,I
=-100mA,I
=-2mA, V
=-10mA, V
= -30V
= -30V, T
CE
B
B
B
CE
=-0.5mA
=-0.5mA
B
=-5mA
=-5V
UNIT
amb
=-5mA
mW
=-5V
mA
mA
mA
°C
V
V
V
V
=150°C

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zumt860c Summary of contents

Page 1

... Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at T PARAMETER SYMBOL MIN. Collector Cut-Off Current I Collector-Emitter V Saturation Voltage Base-Emitter V Saturation Voltage Base-Emitter Voltage V * Collector-Emitter Saturation Voltage at I operating point I = 11mA ZUMT860B T2B ZUMT860C T22 SYMBOL V CBO V CES V CEO V EBO tot T ...

Page 2

... ZUMT860B ZUMT860C 1.2 +25° C 0.8 IC/IB=10 IC/IB=20 IC/IB=50 0 10m I - Collector Current ( CE(sat) 500 250 0 10m Collector Current ( VCE=5V 1.0 0 10m IC - Collector Current (A) V BE(on) TYPICAL CHARACTERISTICS 1.2 0.8 0.4 100m 1.0 VCE=5V +100°C +25°C -55°C 0.5 100m 1 C 100m 100m -55°C 10m 10m +25° ...

Page 3

... ZUMT860B ZUMT860C ELECTRICAL CHARACTERISTICS (Continued) PARAMETER Noise Figure Equivalent Noise Voltage Dynamic Group B Characteristics Group C Group B Group C Group B Group C Group B Group C Static Forward Group B Current Ratio Group C Transition Frequency Collector-Base Capacitance SYMBOL MIN. TYP. MAX. UNIT CONDITIONS – – ...

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