bfp180 Infineon Technologies Corporation, bfp180 Datasheet
bfp180
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bfp180 Summary of contents
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NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA f = 7GHz T • 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 500 MHz C CE Collector-base capacitance MHz CB ...
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SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.18519 fA VAF = 26.867 1.9818 - VAR = 3.2134 1.6195 - RBM = 60 CJE = 3.2473 ...
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Total power dissipation P * Package mounted on epoxy tot Permissible Pulse Load thJS K ...
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Collector-base capacitance 1MHz 0.30 0.25 0.20 0.15 0.10 0.05 0. Power Gain ...
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Power Gain Parameter 18 I =1mA Power ...
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Package Semiconductor Group 8 BFP 180 Nov-22-1996 ...