2sc2715m Jiangsu Changjiang Electronics Technology Co., Ltd., 2sc2715m Datasheet
2sc2715m
Manufacturer Part Number
2sc2715m
Description
Wbfbp-03b Plastic-encapsulate Transistors
Manufacturer
Jiangsu Changjiang Electronics Technology Co., Ltd.
Datasheet
1.2SC2715M.pdf
(3 pages)
DESCRIPTION
NPN Epitaxial planar Silicon Transistor
FEATURES
High Frequency amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: RR,RO,RY
AXIMUM RATINGS* T
V
V
V
I
P
T
T
C
High power gain: G
Recommended for FM IF,OSC Stage and AM CONV.IF Stage
APPLICATION
ELECTRICAL CHARACTERISTICS (Tamb=25℃
J
stg
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector- Base time constant
Power Gain
CBO
CEO
EBO
C
B E
Symbol
RR
C
2SC2715M
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
pe
=27dB(f=10.7MHz)
A
=25℃ unless otherwise noted
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TRANSISTOR
WBFBP-03B Plastic-Encapsulate Transistors
Cc.rbb’
Symbol
V
V
V
V
V
Parameter
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
C
BE(sat)
h
Gp
CBO
EBO
f
FE
T
ob
I
I
I
V
V
V
I
I
V
V
V
V
C
C
E
C
C
CB
EB
CE
CE
CB
CE
CE
=
=
=
=
=
10
1
10
10
10
=35V, I
=
=12V, I
=10V, I
=10V, I
=
=
mA, I
4
10
6
µA, I
µA, I
mA, I
mA, I
V, I
V, I
unless otherwise specified)
V, I
Test
C
C
B
=0
E
C
E
C
C
E
=
=0
C
B
B
=0
=0
=0
=2mA
=
=
1
=
=
=
0
1
1
mA, f=
1
1
mA
, f=
mA, f=30
mA
mA
conditions
1M
10.7M
HZ
M
HZ
HZ
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR
-55-150
Value
150
150
35
30
50
4
MIN
100
35
30
40
27
4
BACK
TOP
TYP
B
C
E
C
C
MAX
240
0.1
0.1
0.4
400
Units
3.2
50
33
mW
1
mA
℃
℃
B
V
V
V
E
UNIT
MHz
µA
µA
dB
pF
ps
V
V
V
V
V
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2sc2715m Summary of contents
Page 1
... JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors 2SC2715M TRANSISTOR DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES High power gain: G =27dB(f=10.7MHz) pe Recommended for FM IF,OSC Stage and AM CONV.IF Stage APPLICATION High Frequency amplifier For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) ...
Page 2
... CLASSIFICATION Rank Range Marking Typical Characteristics R 40-80 70-140 RR O 120-240 RO RY 2SC2715M Y ...
Page 3
illim ...