bc848cwt1 ON Semiconductor, bc848cwt1 Datasheet

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bc848cwt1

Manufacturer Part Number
bc848cwt1
Description
General Purpose Transistors
Manufacturer
ON Semiconductor
Datasheet

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BC846, BC847, BC848
Series
General Purpose
Transistors
NPN Silicon
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
1. FR−5 = 1.0 x 0.75 x 0.062 in.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board,
Thermal Resistance,
Junction and Storage Temperature
These transistors are designed for general purpose amplifier
Pb−Free Packages are Available
(Note 1) T
Junction−to−Ambient
Characteristic
A
= 25°C
Rating
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
Symbol
Symbol
T
V
V
V
R
J
P
CEO
CBO
EBO
, T
I
qJA
C
D
stg
−55 to
Value
+150
Max
100
150
833
6.0
6.0
5.0
65
45
30
80
50
30
1
mAdc
°C/W
Unit
Unit
mW
°C
V
V
V
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1
XX
M
G
(Note: Microdot may be in either location)
ORDERING INFORMATION
2
MARKING DIAGRAM
http://onsemi.com
BASE
1
3
= Specific Device Code
= Month Code
= Pb−Free Package
XX MG
COLLECTOR
Publication Order Number:
SC−70/SOT−323
G
EMITTER
3
CASE 419
2
STYLE 3
BC846AWT1/D

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bc848cwt1 Summary of contents

Page 1

BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. Features • Pb−Free Packages are Available MAXIMUM ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage ( mA) C Collector −Emitter Breakdown Voltage = 10 mA Collector −Base Breakdown Voltage = 10 mA Emitter −Base Breakdown Voltage ...

Page 3

I , COLLECTOR CURRENT (mAdc) C Figure 1. Normalized DC Current Gain 2 25°C A 1.6 1 ...

Page 4

25°C A 2.0 1.0 0.5 0.2 10 0.1 0.2 1 COLLECTOR CURRENT (mA) C Figure 7. DC Current Gain 2.0 1.6 100 1 ...

Page 5

... BC847CWT1 BC847CWT1G BC847CWT3G BC848AWT1 BC848AWT1G BC848BWT1 BC848BWT1G BC848CWT1 BC848CWT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi- cations Brochure, BRD8011/D. BC846, BC847, BC848 Series Package 1A SC−70 (SOT−323) 1A SC− ...

Page 6

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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