2sc3930w Galaxy Semi-Conductor Holdings Limited, 2sc3930w Datasheet - Page 2

• Manufacturer Part Number: 2sc3930w
• Description: Npn Silicon Epitaxial Planar Transistor
• Manufacturer: Galaxy Semi-Conductor Holdings Limited

Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Common emitter reverse transfer
capacitance
Noise figure
Reverse transfer impedance
Marking
h
BL
ELECTRICAL CHARACTERISTICS
CLASSIFICANTION OF h
TYPICAL CHARACTERISTICS
Document number: BL/SSSTF036
Rev.A
FE
NPN Silicon Epitaxial Planar Transistor
Galaxy Electrical
FE
Symbol
V
V
V
I
I
h
f
C
NF
Z
CBO
EBO
T
FE
rb
(BR)CBO
(BR)CEO
(BR)EBO
re
VB
70-140
@ Ta=25℃ unless otherwise specified
Test conditions
I
I
V
V
V
V
f=200MHz
V
f=10.7MHz
V
V
C
E
I
CB
EB
CE
CE
CE
CB
CB
=100μA,I
=100μA,I
C
@ Ta=25℃ unless otherwise specified
=100μA,I
=5V,I
=10V,I
=10V,I
=10V, I
=10V, I
=10V,I
=10V,I
C
=0
E
C
C
C
C
E
E
E
=0
=1mA
=1mA,f=5MHz
=1mA,f=2MHz
= 1mA
= 1mA
=0
=0
B
=0
30
20
5
70
150
MIN
Production specification
2SC3930W
VC
110-220
4
50
TYP
1.5
www.galaxycn.com
MAX
220
0.1
0.1
UNIT
V
V
V
μA
μA
MHz
pF
dB
Ω
2