2n7002kg SeCoS Halbleitertechnologie GmbH, 2n7002kg Datasheet - Page 2

• Manufacturer Part Number: 2n7002kg
• Description: 190 Ma, 60 V, Rds On = 2 ?? N-ch Small Signal Mosfet With Gate Protection
• Manufacturer: SeCoS Halbleitertechnologie GmbH

15-May-2009 Rev. C
N-CHANNEL ELECTRICAL CHARACTERISTICS
Notes:
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Forward Transconductance
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Diode Forward Voltage
Dynamic
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
2
1. T
2. For DESIGN AID ONLY, not subject to production testing.
3. Pulse test: PW ≦ 300μs duty cycle ≦ 2%
4. Switching time is essentially independent of operating temperature.
Elektronische Bauelemente
2,3
A
= 25°C unless otherwise noted.
Parameter
2
2
2
Symbol
V
V
r
V
Coss
I
Crss
(BR)DSS
DS(ON)
Ciss
t
t
I
I
D(ON)
DS(ON)
(OFF)
Qg
GS(th)
g
GSS
(ON)
DSS
fs
Min.
100
800
500
1.0
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
(T
N-Ch Small Signal MOSFET with Gate Protection
Typ.
A
0.4
2.5
30
= 25°C unless otherwise specified)
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
±1000
Max.
±150
±100
±10
100
500
2.5
1.3
0.6
10
25
35
1
2
4
-
-
-
-
-
-
-
190 mA, 60 V, R
Unit
mS
mA
μA
nA
μA
nC
nS
pF
Ω
V
V
2N7002KG
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
V
V
200mA,V
S
GS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
GS
GS
GS
GS
DS
DS
DD
= 200mA, V
=10V,V
=25V, V
=30V,R
=0,V
=60V, V
= V
= 10V, I
= 0, V
= 0, V
= 0, V
= 50, V
= 50V, V
= 60V, V
= 0, I
= 10V, V
= 4.5V, V
= 10V, I
= 4.5V, I
Test Conditions
DS(ON)
GS
GS
GEN
D
GS
GS
GS
, I
GS
L
=±10V,T
GS
= 10uA
GS
=150Ω,I
GS
D
DS
D
=10V,R
= 2 Ω
DS
GS
GS
=4.5V,I
DS
=0V, f=1MHz
= ±20V
= ±10V
= ±5V
DS
= 200 mA
GS
= 250uA
=0, T
= 0
= 500mA
=0, T
= 200mA
= 0
= 7.5V
= 10V
= 0
J
J
D
D
G
=85°C
=125°C
J
=250mA
=
=10Ω
=85°C
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