2n7002m1pt Chenmko Enterprise Co. Ltd., 2n7002m1pt Datasheet - Page 2

• Manufacturer Part Number: 2n7002m1pt
• Description: 2n7002m1pt Surface Mount N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chenmko Enterprise Co. Ltd.

Note:
Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
V
I
g
DYNAMIC CHARACTERISTICS
C
C
C
t
t
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
V
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
DSS
GSSF
GSSR
D(ON)
on
off
FS
GS(th)
DS(ON)
DS(ON)
SD
iss
oss
rss
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance V
Drain-Source On-Voltage
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Drain-Source Diode Forward
Voltage
RATING CHARACTERISTIC CURVES ( 2N7002M1PT )
(Note 1)
T
A
= 25°C unless otherwise noted
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
f = 1.0 MHz
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
L
= 500 mA , V
= 50
= 60 V, V
= -15 V, V
= V
= 10 V
= 25 V, V
= 0 V, I
= 15 V, V
= 10 V, I
= 5.0 V, I
= 10 V, I
= 5.0 V, I
= 10 V, V
= 25 V, R
= 0 V, I
GS
, I
D
D
DS(on)
S
D
= 10 µA
= 250 µA
D
D
= 200 mA
GS
DS
G
D
= 500 mA
DS
GS
DS
= 50 mA
= 500mA
GS
= 25
= 50 mA
= 0 V
, I
= 0 V
= 0 V,
= 0 V
= 7.0V
= 10 V,
D
= 200 m A
,
(Note 1)
DS(on)
T
C
=125°C
500
Min
60
80
1
0.85
Typ
1.2
1.7
0.375
-100
3.75
Max
0.5
100
1.2
2.5
7.5
7.5
50
25
20
40
1
5
Units
mA
mA
mS
µA
nA
nA
nS
pF
V
V
V
V