si7110dn Vishay, si7110dn Datasheet - Page 2

no-image

si7110dn

Manufacturer Part Number
si7110dn
Description
N-channel 20-v D-s Fast Switching Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7110dn-T1-E3
Manufacturer:
VISHAY
Quantity:
19 321
Part Number:
si7110dn-T1-E3
Manufacturer:
VISHAY
Quantity:
4 000
Part Number:
si7110dn-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si7110dn-T1-E3
Quantity:
650
Company:
Part Number:
si7110dn-T1-E3
Quantity:
48 600
Part Number:
si7110dn-T1-GE3
Manufacturer:
VISHAY
Quantity:
4 000
Part Number:
si7110dn-T1-GE3
Manufacturer:
VISHAY
Quantity:
256
Part Number:
si7110dn-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si7110dn-T1-GE3
Quantity:
2 990
Company:
Part Number:
si7110dn-T1-GE3
Quantity:
2 990
Si7110DN
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
MOSFET SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
b
60
48
36
24
12
0
0.0
0.5
a
V
a
DS
Output Characteristics
V
- Drain-to-Source Voltage (V)
a
GS
1.0
= 10 thru 4 V
a
1.5
Symbol
R
V
J
I
t
t
I
I
DS(on)
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
= 25 °C, unless otherwise noted
Q
Q
2.0
g
R
t
t
t
t
t
SD
rr
a
b
fs
gs
gd
r
f
g
rr
g
2.5
3 V
V
V
DS
I
DS
D
= 10 V, V
I
3.0
≅ 1 A, V
F
V
= 20 V, V
V
V
V
V
V
V
V
= 3.2 A, di/dt = 100 A/µs
DS
DS
GS
I
GS
DS
S
DD
DS
DS
Test Conditions
= 3.2 A, V
= 0 V, V
= V
= 4.5 V, I
= 10 V, I
= 15 V, I
= 20 V, V
≥ 5 V, V
= 10 V, R
GEN
f = 1 MHz
GS
GS
GS
, I
= 4.5 V, I
= 10 V, R
= 0 V, T
GS
D
GS
D
D
D
GS
GS
= 250 µA
L
= 21.1 A
= 21.1 A
= 17.4 A
= ± 20 V
= 10 V
= 10 Ω
= 0 V
= 0 V
J
D
g
= 55 °C
= 21.1 A
= 6 Ω
60
48
36
24
12
0
0.0
0.5
V
GS
Transfer Characteristics
1.0
Min.
1.5
0.7
40
- Gate-to-Source Voltage (V)
1.5
0.0044
0.0064
Typ.
0.8
4.5
1.4
71
14
12
10
36
10
30
25
14
16
T
2.0
7
25 °C
S-80581-Rev. E, 17-Mar-08
C
Document Number: 73143
= 125 °C
2.5
0.0053
0.0078
± 100
Max.
2.5
1.2
2.1
21
20
15
55
15
60
50
1
5
3.0
3.5
- 55 °C
Unit
nC
nC
nA
µA
ns
ns
Ω
Ω
V
A
S
V
4.0

Related parts for si7110dn