si7149dp Vishay, si7149dp Datasheet

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si7149dp

Manufacturer Part Number
si7149dp
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 65 °C/W.
d. Package limited.
e. See Solder Profile
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 68934
S-82620-Rev. A, 03-Nov-08
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
- 30
(V)
0.0052 at V
0.0094 at V
8
6.15 mm
D
7
(http://www.vishay.com/doc?73257).
R
D
DS(on)
Si7149DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
6
GS
D
GS
Bottom View
PowerPAK SO-8
(Ω)
= - 4.5 V
5
J
= - 10 V
D
= 150 °C)
a, c
1
P-Channel 30-V (D-S) MOSFET
S
2
I
- 50
- 50
D
S
(A)
3
d
d
S
5.15 mm
e, f
4
G
A
Q
= 25 °C, unless otherwise noted
g
51 nC
(Typ.)
The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
Steady State
New Product
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• 100% R
• 100% UIS Tested
• Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
D
S
g
D
stg
Tested
®
Power MOSFET
Typical
1.2
19
- 55 to 150
- 23.7
- 18.7
- 4.3
5.2
3.3
Limit
- 50
- 50
- 50
± 25
44.4
Maximum
- 30
- 70
- 20
260
20
69
a, b
a, b
a, b
d
d
a, b
a, b
d
1.8
Vishay Siliconix
24
G
Si7149DP
P-Channel MOSFET
www.vishay.com
S
D
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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si7149dp Summary of contents

Page 1

... Bottom View Ordering Information: Si7149DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7149DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 68934 S-82620-Rev. A, 03-Nov-08 New Product 1.5 2.0 2.5 7000 5600 4200 2800 1400 1.8 1.5 1 0.9 0 105 Si7149DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...

Page 4

... Si7149DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0 250 µA D 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.05 0.04 0. °C J 0.02 0.01 0.00 0.8 1.0 1.2 200 160 120 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7149DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si7149DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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