si7178dp Vishay, si7178dp Datasheet - Page 4

• Manufacturer Part Number: si7178dp
• Description: N-channel 100-v D-s Mosfet
• Manufacturer: Vishay

Si7178DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.6
- 1.0
- 1.4
0.01
100
0.6
0.2
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
Threshold Voltage
T
- Source-to-Drain Voltage (V)
T
0.4
J
J
= 150 °C
- Temperature (°C)
25
I
D
0.6
50
= 250 µA
0.01
100
0.1
10
75
0.01
1
0.8
T
* V
Safe Operating Area, Junction-to-Ambient
J
Limited by R
100
I
= 25 °C
D
GS
= 5 mA
> minimum V
1.0
V
125
Single Pulse
0.1
DS
T
A
= 25 °C
- Drain-to-Source Voltage (V)
DS(on)
New Product
150
1.2
*
GS
at which R
1
DS(on)
10
is specified
0.10
0.08
0.06
0.04
0.02
0.00
200
160
120
80
40
0
0
0 .
5
0
1
Single Pulse Power, Junction-to-Ambient
100
On-Resistance vs. Gate-to-Source Voltage
10 ms
100 ms
1 s
10 s
1 ms
DC
6
V
0.01
GS
- Gate-to-Source Voltage (V)
7
Time (s)
0.1
S-80678-Rev. A, 31-Mar-08
Document Number: 69951
8
T
T
1
A
A
= 125 °C
= 25 °C
9
10
1
0