si7860adp Vishay, si7860adp Datasheet

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si7860adp

Manufacturer Part Number
si7860adp
Description
N-channel Reduced, Fast Switching Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
SI7860ADP
Manufacturer:
NSC
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Part Number:
si7860adp-T1-E3
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si7860adp-T1-E3
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si7860adp-T1-GE3
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Notes
a.
Document Number: 72651
S-32674—Rev. A, 29-Dec-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient (MOSFET)
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
30
30
(V)
N-Channel Reduced Q
8
6.15 mm
D
J
J
0.0125 @ V
a
a
0.0095 @ V
Ordering Information: Si7860ADP-T1-E3
= 150_C)
= 150_C)
7
Parameter
Parameter
r
D
DS(on)
6
D
a
a
PowerPAK SO-8
GS
GS
Bottom View
5
a
a
(W)
= 4.5 V
D
= 10 V
a
1
S
2
S
A
3
S
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
5.15 mm
t v 10 sec
T
T
T
T
A
A
A
A
4
I
= 25_C
= 70_C
= 25_C
= 70_C
New Product
G
D
16
16
(A)
g
, Fast Switching MOSFET
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJC
I
I
I
DS
GS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized for High Efficiency
D New Low Thermal Resistance PowerPAKr
D 100% R
APPLICATIONS
D Buck Converter
D Synchronous Rectifier
Package with Low 1.07-mm Profile
- High Side or Low Side
- Secondary Rectifier
10 secs
Typical
G
4.1
4.8
3.1
1.9
16
13
21
56
N-Channel MOSFET
g
Tested
-55 to 150
"20
"50
30
D
S
Steady State
Maximum
Vishay Siliconix
1.5
1.8
1.1
2.5
26
70
11
8
Si7860ADP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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si7860adp Summary of contents

Page 1

... 0.0125 @ PowerPAK SO-8 6. Bottom View Ordering Information: Si7860ADP-T1-E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation ...

Page 2

... Si7860ADP Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...

Page 3

... Document Number: 72651 S-32674—Rev. A, 29-Dec-03 New Product 0.040 0.032 0.024 0.016 T = 25_C J 0.008 0.000 0.8 1.0 1.2 Si7860ADP Vishay Siliconix Capacitance 2500 2000 C iss 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 ...

Page 4

... Si7860ADP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 250 mA D 0.3 0.0 -0.3 -0.6 -0.9 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 75 100 125 150 Safe Operating Area, Junction-to-Case ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72651 S-32674—Rev. A, 29-Dec-03 New Product - Square Wave Pulse Duration (sec) Si7860ADP Vishay Siliconix - www.vishay.com 5 ...

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