si7858dp-t1 Vishay, si7858dp-t1 Datasheet
si7858dp-t1
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si7858dp-t1 Summary of contents
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... PowerPAK SO-8 6. Bottom View Ordering Information: Si7858DP-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...
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... Si7858DP Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
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... V - Source-to-Drain Voltage (V) SD Document Number: 71832 S-31727—Rev. B, 18-Aug 25_C J 0.8 1.0 1.2 Si7858DP Vishay Siliconix Capacitance 7500 6000 C iss 4500 3000 C oss C rss 1500 Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 4 ...
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... Si7858DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 = 250 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...