si7852dp-t1 Vishay, si7852dp-t1 Datasheet

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si7852dp-t1

Manufacturer Part Number
si7852dp-t1
Description
N-channel 80-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
SI7852DP-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si7852dp-t1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
28 706
Part Number:
si7852dp-t1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si7852dp-t1-E3
0
Part Number:
si7852dp-t1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si7852dp-t1-GE3
0
Company:
Part Number:
si7852dp-t1-GE3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Solder Profile (
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71627
S-72691-Rev. D, 24-Dec-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
Ordering Information:
DS
80
(V)
8
6.15 mm
D
7
D
6
0.0165 at V
D
0.022 at V
http://www.vishay.com/ppg?73257
PowerPAK SO-8
Bottom View
5
Si7852DP-T1
Si7852DP-T1-E3 (Lead (Pb)-free)
r
D
DS(on)
J
a
= 150 °C)
a
GS
GS
1
(Ω)
S
= 10 V
= 6 V
2
N-Channel 80-V (D-S) MOSFET
S
a
3
S
5.15 mm
4
G
a
b,c
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
A
I
= 25 °C, unless otherwise noted
D
12.5
10.9
Steady State
Steady State
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• New Low Thermal Resistance PowerPAK
• PWM Optimized for Fast Switching
• 100 % R
• Primary Side Switch for DC/DC Applications
Symbol
Symbol
T
R
R
Package with Low 1.07 mm Profile
J
V
V
I
I
P
, T
DM
thJC
I
AS
I
thJA
GS
DS
D
S
D
stg
G
N-Channel MOSFET
g
Tested
®
D
S
Power MOSFETS
Typical
10 s
12.5
10.0
4.7
5.2
3.3
1.5
19
52
- 55 to 150
± 20
260
80
50
40
Steady State
Maximum
7.6
6.1
1.7
1.9
1.2
1.8
24
65
Vishay Siliconix
Si7852DP
www.vishay.com
®
°C/W
RoHS*
COMPLIANT
Unit
Unit
°C
W
V
A
Available
Pb-free
1

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si7852dp-t1 Summary of contents

Page 1

... Bottom View Ordering Information: Si7852DP-T1 Si7852DP-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7852DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71627 S-72691-Rev. D, 24-Dec-07 3000 2500 2000 1500 1000 0.08 0.06 0. °C J 0.02 0.00 0.8 1.0 1.2 Si7852DP Vishay Siliconix C iss C rss 500 C oss Drain-to-Source Voltage (V) DS Capacitance 2 2.0 1.5 1.0 0.5 ...

Page 4

... Si7852DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 0 0.0 - 0.5 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 μA 75 100 125 150 100 0.001 0.01 0.1 Time (s) Single Pulse Power, Junction-to-Ambient - ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71627. Document Number: 71627 S-72691-Rev. D, 24-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7852DP Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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