si7848bdp Vishay, si7848bdp Datasheet

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si7848bdp

Manufacturer Part Number
si7848bdp
Description
N-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Quantity
Price
Part Number:
si7848bdp-T1-E3
Manufacturer:
NS
Quantity:
120
Company:
Part Number:
si7848bdp-T1-E3
Quantity:
456
Part Number:
si7848bdp-T1-GE3
Manufacturer:
VISHAY
Quantity:
2 475
Part Number:
si7848bdp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under Steady State conditions is 70 °C/W.
f. Based on T
Document Number: 74632
S-80440-Rev. B, 03-Mar-08
Ordering Information: Si7848BDP-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
V
DS
40
(V)
8
6.15 mm
D
7
C
D
= 25 °C.
6
0.012 at V
0.009 at V
D
PowerPAK SO-8
Bottom View
Si7848BDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
5
R
http://www.vishay.com/ppg?73257
D
DS(on)
GS
GS
J
1
(Ω)
= 4.5 V
= 10 V
= 150 °C)
S
a, e
2
S
N-Channel 40-V (D-S) MOSFET
3
S
5.15 mm
4
I
G
D
47
40
(A)
Steady State
f
c, d
t ≤ 10 s
T
T
T
T
L = 0.1 mH
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
g
15 nC
(Typ.)
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free available
• TrenchFET
• 100 % R
• DC/DC Converters
- Synchronous Buck
- Synchronous Rectifier
Typical
2.9
25
g
and UIS Tested
®
Power MOSFET
G
- 55 to 150
N-Channel MOSFET
12.8
3.5
4.2
2.7
Limit
16
± 20
260
40
47
38
50
15
11
30
36
23
a, b
a, b
a, b
a, b
a, b
D
S
Maximum
3.5
30
Vishay Siliconix
Si7848BDP
www.vishay.com
°C/W
Unit
Unit
RoHS
mJ
°C
COMPLIANT
W
V
A
A
1

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si7848bdp Summary of contents

Page 1

... Bottom View Ordering Information: Si7848BDP-T1-E3 (Lead (Pb)-free) Si7848BDP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current ...

Page 2

... Si7848BDP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 74632 S-80440-Rev. B, 03-Mar- 1.2 1.6 2 Si7848BDP Vishay Siliconix ° 125 ° 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 2400 C iss 2000 ...

Page 4

... Si7848BDP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2 250 µA D 2.2 2.0 1.8 1.6 1.4 1.2 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.030 0.025 0.020 0.015 0.010 °C J 0.005 0.000 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74632 S-80440-Rev. B, 03-Mar-08 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si7848BDP Vishay Siliconix ...

Page 6

... Si7848BDP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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