si7844dp-t1 Vishay, si7844dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7844dp-t1
• Description: Dual N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 71328
S-52554-Rev. C, 30-Mar-06
0.040
0.032
0.024
0.016
0.008
0.000
20
10
10
1
8
6
4
2
0
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
= 10 A
0.2
On-Resistance vs. Drain Current
= 15 V
V
4
3
SD
Q
g
T
- Source-to-Drain Voltage (V)
V
0.4
J
I
GS
- Total Gate Charge (nC)
= 150 °C
Gate Charge
- Drain Current (A)
= 4.5 V
8
6
0.6
12
9
0.8
T
V
J
GS
= 25 °C
16
12
1.0
= 10 V
1.2
20
15
1000
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
800
600
400
200
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
-
GS
25
= 10 A
= 10 V
2
6
T
V
0
V
J
C
DS
GS
- Junction
rss
-
- Drain-to-Source Voltage (V)
25
Gate-to-Source Voltage
Capacitance
12
4
I
D
= 10 A
Temperature (°C)
50
C
Vishay Siliconix
C
oss
iss
18
75
6
Si7844DP
100
www.vishay.com
(V )
24
8
125
150
30
10
3