si7842dp-t1 Vishay, si7842dp-t1 Datasheet

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si7842dp-t1

Manufacturer Part Number
si7842dp-t1
Description
Dual N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
SI7842DP-T1
Manufacturer:
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Quantity:
20 000
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si7842dp-t1-E3
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Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71617
S-52554-Rev. C, 19-Dec-05
ABSOLUTE MAXIMUM RATINGS T
THERMAL RESISTANCE RATINGS
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
V
DS
DS
Ordering Information:
30
30
(V)
(V)
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
8
D1
6.15 mm
7
D1
Diode Forward Voltage
0.030 at V
0.022 at V
6
D2
PowerPAK SO-8
Parameter
Parameter
0.50 V at 1.0 A
Bottom View
5
r
DS(on)
Si7842DP-T1
Si7842DP-T1—E3 (Lead (Pb)-Free)
D2
J
a
V
= 150 °C)
SD
a
GS
GS
(V)
1
(Ω)
= 4.5 V
= 10 V
S1
2
a
G1
3
S2
5.15 mm
a
Steady State
Steady State
4
T
T
T
T
t ≤ 10 sec
b,c
G2
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
A
= 25 °C, unless otherwise noted
I
I
D
F
8.5
3.0
10
(A)
(A)
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
I
I
thJA
thJC
DS
GS
D
S
D
stg
FEATURES
APPLICATIONS
• LITTLE FOOT
• New Low Thermal Resistance PowerPAK
• 100 % R
• Bus and Logic DC-DC
G
Package with Low 1.07-mm Profile
Typical
1
3.9
26
60
N-Channel MOSFET
MOSFET
10 secs
g
6.0
2.9
3.5
2.2
10
Tested
D
S
1
Maximum
1
®
5.5
35
85
Plus Schottky
– 55 to 150
± 20
260
30
30
G
2
Typical
N-Channel MOSFET
3.9
26
60
Steady State
Schottky
Vishay Siliconix
S
D
6.3
5.0
1.1
1.4
0.9
2
2
Maximum
Si7842DP
5.5
35
85
www.vishay.com
®
Schottky Diode
RoHS*
COMPLIANT
Available
Pb-free
°C/W
Unit
Unit
°C
W
V
A
1

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si7842dp-t1 Summary of contents

Page 1

... Bottom View Ordering Information: Si7842DP-T1 Si7842DP-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7842DP Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Symbol Static V Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a r Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... Q - Total Gate Charge (nC) Gate Charge Document Number: 71617 S-52554-Rev. C, 19-Dec- 2.0 2.5 3.0 1000 Si7842DP Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 800 C iss 600 ...

Page 4

... Si7842DP Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 I 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com °C J 0.8 1.0 1.2 = 250 μA ...

Page 5

... Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 100 125 150 200 160 120 80 C oss Drain-to-Source Voltage (V) DS Capacitance Si7842DP Vishay Siliconix - 150 ° ° 0.0 0.3 0.6 0.9 1 Forward Voltage Drop (V) ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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