si7884bdp Vishay, si7884bdp Datasheet - Page 3
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si7884bdp
Manufacturer Part Number
si7884bdp
Description
Vishay Siliconix
Manufacturer
Vishay
Datasheet
1.SI7884BDP.pdf
(7 pages)
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68395
S-82113-Rev. B, 08-Sep-08
0.010
0.008
0.006
0.004
0.002
0.000
50
40
30
20
10
10
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0
0
I
D
= 16 A
10
11
V
0.5
DS
V
Output Characteristics
Q
GS
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
= 10 thru 4 V
V
- Drain Current (A)
DS
Gate Charge
20
22
= 20 V
1.0
V
V
GS
GS
V
DS
30
33
= 4.5 V
= 10 V
= 10 V
V
V
GS
DS
1.5
= 3 V
= 30 V
40
44
New Product
2.0
50
55
4000
3200
2400
1600
800
2.0
1.6
1.2
0.8
0.4
10
8
6
4
2
0
0
- 50
0
0
I
D
On-Resistance vs. Junction Temperature
C
= 16 A
rss
- 25
C
V
V
oss
Transfer Characteristics
10
T
DS
GS
1
0
J
T
C
- Junction Temperature (°C)
T
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
= 125 °C
= 25 °C
Capacitance
25
20
50
Vishay Siliconix
2
Si7884BDP
V
C
75
GS
iss
= 10 V
www.vishay.com
100
V
T
30
3
C
GS
= - 55 °C
= 4.5 V
125
150
40
4
3