si7886adp Vishay, si7886adp Datasheet - Page 3
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si7886adp
Manufacturer Part Number
si7886adp
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI7886ADP.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
si7886adp-T1-E3
Manufacturer:
PULSE
Quantity:
13 400
Part Number:
si7886adp-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si7886adp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 73156
S-51016—Rev. B, 23-May-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0075
0.0060
0.0045
0.0030
0.0015
0.0000
6
5
4
3
2
1
0
50
10
1
0.00
0
0
V
I
D
V
DS
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Drain Current
GS
= 25 A
0.2
10
= 15 V
V
= 4.5 V
Q
SD
T
g
J
= 150_C
ï Total Gate Charge (nC)
ï Source-to-Drain Voltage (V)
I
D
20
0.4
ï Drain Current (A)
Gate Charge
20
30
0.6
30
40
0.8
V
GS
T
40
J
= 10 V
50
= 25_C
1.0
50
60
1.2
0.025
0.020
0.015
0.010
0.005
0.000
8000
7000
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
0
ï50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
ï25
V
I
D
GS
= 25 A
5
V
2
V
GS
= 10 V
DS
T
J
0
ï Gate-to-Source Voltage (V)
ï Junction Temperature (_C)
ï Drain-to-Source Voltage (V)
10
Capacitance
25
C
4
oss
Vishay Siliconix
15
50
C
Si7886ADP
iss
6
75
I
20
D
C
= 25 A
rss
100
www.vishay.com
8
25
125
10
150
30
3