si7898dp-t1 Vishay, si7898dp-t1 Datasheet - Page 4

• Manufacturer Part Number: si7898dp-t1
• Description: N-channel 150-v D-s Mosfet
• Manufacturer: Vishay

Si7898DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
- 0.5
- 1.0
- 1.5
1.0
0.5
0.0
0.01
- 50
0.1
2
1
10
- 4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
- 3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 μA
75
0.01
100
0.1
10
0.01
1
10
100
- 2
125
Limited by
Single Pulse
T
r
DS(on)
C
0.1
V
Square Wave Pulse Duration (sec)
= 25 °C
DS
150
- Drain-to-Source Voltage (V)
Safe Operating Area
10
- 1
1
10
200
160
120
80
40
0
1
0.001
100
Single Pulse Power, Junction-to-Ambient
10 μs
100 μs
1 ms
10 ms
100 ms
1 s
10 s
100 s, dc
1000
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (sec)
- T
t
1
A
0.1
S-52555-Rev. C, 19-Dec-05
= P
t
2
Document Number: 71873
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 65 °C/W
1
600
10