si7872dp-t1 Vishay, si7872dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7872dp-t1
• Description: Dual N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

MOSFET CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 72035
S-52555-Rev. B, 30-Mar-06
0.040
0.030
0.020
0.010
0.000
30
25
20
15
10
10
5
0
8
6
4
2
0
0
0
0
V
V
I
D
On-Resistance vs. Drain Current
DS
GS
5
= 7.5 A
2
V
3
= 15 V
= 10 thru 5 V
DS
Output Characteristics
V
- Drain-to-Source Voltage (V)
Q
GS
10
g
I
D
= 4.5 V
Gate Charge
- Total Gate Charge (nC)
4
6
- Drain Current (A)
15
4 V
6
9
20
V
GS
3 V
= 10 V
8
12
25
New Product
10
30
15
1200
960
720
480
240
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
5
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 7.5 A
C
5
rss
= 10 V
1
V
GS
T
V
Transfer Characteristics
0
J
DS
- Junction Temperature
T
- Gate-to-Source Voltage (V)
C
10
- Drain-to-Source Voltage (V)
= 125 °C
25
25 °C
Capacitance
2
50
15
C
Vishay Siliconix
C
iss
oss
3
75
Si7872DP
20
- 55 °C
(°
www.vishay.com
100
C)
4
25
125
150
30
5
3