si7386dp Vishay, si7386dp Datasheet - Page 4
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si7386dp
Manufacturer Part Number
si7386dp
Description
N-channel Reduced Qg, Fast Switching Mosfet
Manufacturer
Vishay
Datasheet
1.SI7386DP.pdf
(6 pages)
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Si7386DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
I
D
J
- Temperature (°C)
= 250 µA
25
10
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
100
10
10
1
0.1
-2
Limited by R
Limited
* V
I
125
D(on)
GS
Single Pulse
T
> minimum V
C
150
= 25 °C
V
DS
Square Wave Pulse Duration (s)
DS(on) *
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
-1
GS
at which R
BV
DSS
Limited
DS(on)
10
50
40
30
20
10
0
0.01
1
is specified
I
DM
Limited
10 ms
100 ms
1 s
10 s
DC
0.1
100
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
1
JM
Time (s)
- T
t
A
1
= P
S-80439-Rev. C, 03-Mar-08
t
Document Number: 73108
2
DM
10
Z
thJA
thJA
100
t
t
1
2
(t)
= 67 °C/W
100
600
600