si7302dn Vishay, si7302dn Datasheet

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si7302dn

Manufacturer Part Number
si7302dn
Description
N-channel 220-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
si7302dn-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 73306
S-83051-Rev. D, 29-Dec-08
Ordering Information: Si7302DN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
220
(V)
8
3.30 mm
D
7
C
D
= 25 °C.
6
0.320 at V
0.340 at V
PowerPAK 1212-8
D
Bottom View
Si7302DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
5
DS(on)
D
GS
GS
(Ω)
J
1
= 10 V
= 6 V
= 150 °C)
S
b, f
2
S
N-Channel 220-V (D-S) MOSFET
3
S
3.30 mm
4
G
I
D
8.4
8.2
(A)
a
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
9.1 nC
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Primary Side Switching
Symbol
Symbol
T
R
R
Available
J
V
V
I
P
, T
I
DM
I
thJA
thJC
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
G
1.9
26
N-Channel MOSFET
- 55 to 150
2.3
1.8
3.2
3.8
2.0
Limit
± 20
220
260
8.4
6.7
8.4
10
52
33
b, c
b, c
b, c
b, c
b, c
D
S
Maximum
2.4
33
Vishay Siliconix
Si7302DN
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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si7302dn Summary of contents

Page 1

... Bottom View Ordering Information: Si7302DN-T1-E3 (Lead (Pb)-free) Si7302DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation ...

Page 2

... Si7302DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73306 S-83051-Rev. D, 29-Dec-08 10.0 2.5 3.0 3.5 4 154 Si7302DN Vishay Siliconix 8.0 6 125 °C C 4.0 25 °C 2.0 0.0 2.0 2.5 3.0 3.5 4 Gate-to-Source Voltage (V) GS Transfer Characteristics 900 750 C iss 600 450 300 150 ...

Page 4

... Si7302DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 3.6 3.2 2.8 2.4 2 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1 250 µ 100 125 150 10 Limited ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73306 S-83051-Rev. D, 29-Dec-08 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si7302DN Vishay Siliconix 4 2 ...

Page 6

... Si7302DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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