zxmp3f37dn8 Diodes, Inc., zxmp3f37dn8 Datasheet - Page 4

• Manufacturer Part Number: zxmp3f37dn8
• Description: 30v So8 Dual P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Electrical characteristics (at T
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
Issue 1 - August 2008
© Diodes Incorporated 2008
Parameter
Static
Drain-Source breakdown
voltage
Zero Gate voltage Drain
current
Gate-Body leakage
Gate-Source threshold
voltage
Static Drain-Source
on-state resistance
Forward
Transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer
capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total Gate charge
Gate-Source charge
Gate-Drain charge
Source–Drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(†)
(‡) (†)
(
(
*
*
)
) (†)
(
*
(‡)
)
(‡)
Symbol
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
amb
= 25°C unless otherwise stated) Q1 and Q2
Min.
-1.3
-30
-0.80
Typ.
1678
18.6
31.6
16.2
303
178
3.5
4.9
4.3
6.2
4
44
28
10
0.025
0.041
Max.
-1.0
-2.5
-1.2
100
Unit
µA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
V
ZXMP3F37DN8
Conditions
I
V
V
I
V
V
V
V
f=1MHz
V
I
R
V
I
I
I
D
D
D
D
S
S
DS
GS
GS
GS
DS
DS
DD
DS
G
= -1.7A,V
= -2.2A,di/dt=100A/μs
= -250μA, V
= -1A
= -7.1A
= -250μA, V
≅ 6.0Ω,
=-YV, V
=±
= -10V, I
= -4.5V, I
= -15V, I
= -15V, V
= -15V, V
= -15V, V
www.diodes.com
20V, V
www.zetex.com
GS
GS
D
D
D
GS
GS
DS
GS
= -7.1A
=0V
= -7.1A
DS
=0V
GS
= -5.5A
=0V
=0V
= -10V
= -10V
=V
=0V
GS