bsc106n025s Infineon Technologies Corporation, bsc106n025s Datasheet - Page 3
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bsc106n025s
Manufacturer Part Number
bsc106n025s
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSC106N025S.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
bsc106n025sG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.1
4)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
See figure 16 for gate charge parameter definition
4)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
Q
I
I
V
Q
d(on)
r
d(off)
f
S
S,pulse
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
g(sync)
oss
rr
V
f =1 MHz
V
I
V
V
V
V
V
T
V
T
V
di
D
page 3
C
j
GS
DD
DD
GS
DS
GS
DD
GS
R
=25 A, R
=25 °C
F
=25 °C
=15 V, I
/dt =400 A/µs
=0.1 V,
=0 V, V
=15 V, V
=15 V, I
=0 to 5 V
=0 to 5 V
=15 V, V
=0 V, I
F
F
G
DS
=30 A,
=I
D
=2.7 Ω
GS
GS
=25 A,
=15 V,
S
=10 V,
=0 V
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1030
0.93
typ.
396
3.9
3.8
3.0
3.7
1.6
2.5
4.6
8.3
3.6
7.3
8.6
52
15
-
-
-
BSC106N025S G
max.
1370
527
120
5.8
5.7
4.5
4.9
2.2
3.8
6.5
1.1
78
23
11
10
11
30
10
-
Unit
pF
ns
nC
V
nC
A
V
nC
2008-04-25