bsc123n10lsg Infineon Technologies Corporation, bsc123n10lsg Datasheet - Page 4

• Manufacturer Part Number: bsc123n10lsg
• Description: Optimos 2 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.06
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
120
10
10
10
10
10
80
40
DS
0
-1
3
2
1
0
C
10
0
); T
)
-1
C
p
=25 °C; D =0
40
10
0
DC
T
V
C
DS
10
1 ms
80
[°C]
1
[V]
10 ms
100 µs
10 µs
120
10
1 µs
2
160
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
80
60
40
20
=f(t
10
10
10
10
0
C
-1
-2
1
0
); V
0
10
p
)
-5
0.02
0.5
0.2
0.1
single pulse
0.05
GS
≥10 V
p
/T
40
10
-4
0.01
T
t
C
80
10
p
[°C]
[s]
-3
BSC123N10LS G
120
10
-2
2008-10-20
10
160
-1