bsc190n15ns3g Infineon Technologies Corporation, bsc190n15ns3g Datasheet - Page 4
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bsc190n15ns3g
Manufacturer Part Number
bsc190n15ns3g
Description
Optimos 3 Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSC190N15NS3G.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSC190N15NS3G
Manufacturer:
SAMSUNG
Quantity:
600 000
Company:
Part Number:
BSC190N15NS3G
Manufacturer:
INFINEON
Quantity:
5 000
Part Number:
BSC190N15NS3G
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.2
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
150
125
100
10
10
10
10
10
75
50
25
DS
0
-1
3
2
1
0
C
10
0
); T
)
-1
C
p
=25 °C; D =0
50
10
0
T
V
C
DS
100
10
[°C]
1
[V]
100 µs
1 ms
10 µs
DC
10 ms
150
10
2
1 µs
200
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
60
40
20
=f(t
10
10
10
10
0
C
-1
-2
1
0
); V
0
10
p
)
-5
0.05
0.2
0.1
0.5
GS
single pulse
≥10 V
0.01
p
10
/T
0.02
50
-4
10
T
-3
t
C
100
p
[°C]
[s]
BSC190N15NS3 G
10
-2
150
10
-1
2008-11-12
200
10
0