bsc020n025sg Infineon Technologies Corporation, bsc020n025sg Datasheet - Page 3

• Manufacturer Part Number: bsc020n025sg
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.1
4)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
See figure 16 for gate charge parameter definition
4)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
Q
I
I
V
Q
d(on)
r
d(off)
f
S
S,pulse
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
g(sync)
oss
rr
V
f =1 MHz
V
I
V
V
V
V
V
T
V
T
V
di
D
page 3
C
j
GS
DD
DD
GS
DS
GS
DD
GS
R
=25 A, R
=25 °C
F
=25 °C
=15 V, I
/dt =400 A/µs
=0.1 V,
=0 V, V
=15 V, V
=15 V, I
=0 to 5 V
=0 to 5 V
=15 V, V
=0 V, I
F
F
G
DS
=50 A,
=I
D
=2.7 Ω
GS
GS
=25 A,
=15 V,
S
=10 V,
=0 V
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
6230
2360
10.3
0.82
typ.
270
2.8
10
47
18
10
13
20
50
44
52
8
-
-
-
BSC020N025S G
max.
8290
3140
405
200
15
15
70
12
23
13
19
29
66
58
69
50
20
1
-
Unit
pF
ns
nC
V
nC
A
V
nC
2008-04-24