bsc052n03ls Infineon Technologies Corporation, bsc052n03ls Datasheet - Page 3

• Manufacturer Part Number: bsc052n03ls
• Description: N-channel Power Mosfet
• Manufacturer: Infineon Technologies Corporation

2
at
Table 2
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
connection. PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
3
Table 3
Parameter
Thermal resistance, junction - case
Device on PCB
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
connection. PCB is vertical in still air
Final Data Sheet
T
j
= 25 °C, unless otherwise specified.
Maximum ratings
Maximum ratings
Thermal characteristics
Thermal characteristics
2)
3)
Symbol
R
R
Symbol
I
I
I
E
V
P
T
D
D,pulse
AS
thJC
thJA
j
AS
GS
tot
,T
stg
Min.
-
-
-
Min.
-
-
-
-
-
-
-
-
-20
-
-
-55
55/150/56
2
Typ.
-
-
-
Typ. Max.
-
-
-
-
-
-
-
-
-
-
-
-
Values
Values
2
2
57
36
48
31
17
228
35
12
20
28
2.5
150
(one layer, 70 µm thick) copper area for drain
(one layer, 70 µm thick) copper area for drain
Max.
4.5
20
50
OptiMOS™ Power-MOSFET
Unit
A
mJ
V
W
°C
Unit
K/W
Note / Test Condition
V
V
V
V
V
R
T
I
T
T
D
C
C
A
GS
GS
GS
GS
GS
thJA
=35 A,R
=25 °C
=25 °C
=25 °C, R
=10 V, T
=10 V, T
=4.5 V, T
=4.5 V, T
=10 V, T
Note /
Test Condition
top
6 cm
=50 K/W
BSC052N03LS
2
GS
2.1, 2011-09-23
cooling area
=25 Ω
thJA
C
C
A
C
C
=25 °C
=100 °C
=25 °C,
1)
=25 °C
=100 °C
)
=50 K/W
1)
1)
)