bsc059n03sg Infineon Technologies Corporation, bsc059n03sg Datasheet - Page 2
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bsc059n03sg
Manufacturer Part Number
bsc059n03sg
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSC059N03SG.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSC059N03SG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.53
1)
2)
connection. PCB is vertical in still air.
3)
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
See figure 3
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=50 A
DS
=V
=30 V, V
=30 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
2
cooling area
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
=35 µA
D
GS
GS
DS
DS(on)max
=50 A
=50 A
=0 V,
=0 V,
=0 V
2)
,
min.
1.2
0.4
30
42
-
-
-
-
-
-
-
-
Values
typ.
1.6
0.1
6.9
4.6
0.9
10
10
84
-
-
-
-
BSC059N03S G
max.
100
100
2.6
8.6
5.5
1.8
62
45
2
1
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2008-04-28