bsc014ne2lsi Infineon Technologies Corporation, bsc014ne2lsi Datasheet - Page 4

• Manufacturer Part Number: bsc014ne2lsi
• Description: N-channel Power Mosfet
• Manufacturer: Infineon Technologies Corporation

4
Electrical characteristics, at
Table 4
Parameter
Drain-source breakdown voltage
Breakdown voltage temperature
coefficient
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Table 5
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Final Data Sheet
Electrical characteristics
Static characteristics
Dynamic characteristics
T
j=25 °C, unless otherwise specified.
Symbol
V
d
dT
V
I
I
R
R
g
DSS
GSS
V
fs
(BR)DSS
GS(th)
DS(on)
G
Symbol
C
C
C
t
t
t
t
d(on)
r
d(off)
f
(BR)DSS/
j
rss
iss
oss
Min.
25
-
1.2
-
-
-
-
-
-
70
Min.
-
-
-
-
-
-
-
3
Typ.
-
15
-
-
2
10
1.6
1.2
0.6
140
Values
Typ.
2700
1200
120
5
5
25
3.6
Values
Max.
-
-
2.0
0.5
-
100
2
1.4
-
-
Max.
-
-
-
-
-
-
-
OptiMOS™ Power-MOSFET
Unit
V
mV/K
mA
nA
mΩ
Ω
S
Unit
pF
ns
Note / Test Condition
V
I
25°C
V
V
T
V
T
V
V
V
|V
I
Electrical characteristics
D
D
j
j
GS
DS
DS
DS
GS
GS
GS
=30 A
= 10 mA, referenced to
=25 °C
=125 °C
DS
=
=20 V,
=20 V,
=0 V,
=20V,
=4.5 V,
=10 V,
|>2|I
Note /
Test Condition
V
f
V
I
V
=1 MHz
D
GS
DD
=30 A,
GS
BSC014NE2LSI
=0 V,
=12 V,
D
,
|
I
I
RDS(on)max
D
V
2.1, 2011-09-08
D
V
V
I
=10 mA
I
D
=250 µA
DS
D
GS
GS
=30 A,
=30A,
R
=0 V
V
=0 V,
=0 V,
G
V
DS
= 1.6 Ω
GS
=12 V,
,
=10V,