bsc017n04nsg Infineon Technologies Corporation, bsc017n04nsg Datasheet

no-image

bsc017n04nsg

Manufacturer Part Number
bsc017n04nsg
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSC017N04NSG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
1)
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel
• Normal level
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Gate source voltage
OptiMOS
Type
BSC017N04NS G
J-STD20 and JESD22
®
3 Power-Transistor
3)
j
Package
PG-TDSON-8
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
4)
product (FOM)
for target applications
Symbol Conditions
I
I
I
E
V
D
D,pulse
AS
AS
GS
Marking
017N04NS
V
V
V
R
T
T
I
D
page 1
C
C
GS
GS
GS
thJA
=50 A, R
=25 °C
=25 °C
=10 V, T
=10 V, T
=10 V, T
=50 K/W
GS
C
C
A
=25
Product Summary
V
R
I
2)
=25 °C,
=25 °C
=100 °C
D
DS
DS(on),max
Value
100
100
400
295
±20
30
50
PG-TDSON-8
BSC017N04NS G
100
1.7
40
Unit
A
mJ
V
V
m
A
2007-12-14

Related parts for bsc017n04nsg

bsc017n04nsg Summary of contents

Page 1

OptiMOS ® 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel • Normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) ...

Page 2

Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case Device on PCB Electrical characteristics Static characteristics ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation P =f(T ) tot C 160 140 120 100 Safe operating area I =f =25 ° parameter ...

Page 5

Typ. output characteristics I =f =25 ° parameter 400 300 200 100 Typ. transfer characteristics I =f |>2 ...

Page 6

Drain-source on-state resistance =10 V DS(on 3 1.5 1 0.5 0 -60 - Typ. capacitances C =f ...

Page 7

Avalanche characteristics parameter: T j(start) 100 125 ° Drain-source breakdown voltage V =f BR(DSS ...

Page 8

Package Outline PG-TDSON-8: Outline Footprint Dimensions in mm Rev. 1.0 PG-TDSON-8 page 8 BSC017N04NS G 2007-12-14 ...

Page 9

Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.0 page 9 BSC017N04NS G 2007-12-14 ...

Page 10

Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...

Related keywords