bsc032ne2ls Infineon Technologies Corporation, bsc032ne2ls Datasheet - Page 4

• Manufacturer Part Number: bsc032ne2ls
• Description: N-channel Power Mosfet
• Manufacturer: Infineon Technologies Corporation

4
Electrical characteristics, at
Table 4
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Table 5
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Final Data Sheet
Electrical characteristics
Static characteristics
Dynamic characteristics
T
j=25 °C, unless otherwise specified.
Symbol
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
DS(on)
G
Symbol
C
C
C
t
t
t
t
d(on)
r
d(off)
f
rss
iss
oss
Min.
25
1.2
-
-
-
-
-
-
46
Min.
-
-
-
-
-
-
-
3
Typ.
-
-
0.1
10
10
3.8
2.7
0.9
93
Values
Typ.
1200
470
51
3.3
2.8
15
2.2
Values
Max.
-
2
1
100
100
4.8
3.2
-
-
Max.
-
-
-
-
-
-
-
OptiMOS™ Power-MOSFET
Unit
V
µA
nA
mΩ
Ω
S
Unit
pF
ns
Note / Test Condition
V
V
V
T
V
T
V
V
V
|V
I
Electrical characteristics
D
j
j
GS
DS
DS
DS
GS
GS
GS
=30 A
=25 °C
=125 °C
DS
=
=25 V,
=25 V,
=0 V,
=20V,
=4.5 V,
=10 V,
|>2|I
Note /
Test Condition
V
f
V
I
V
=1 MHz
D
GS
DD
=30 A,
GS
BSC032NE2LS
=0 V,
=12 V,
D
,
|
I
I
RDS(on)max
D
V
2.1, 2011-09-20
D
V
V
I
=1mA
I
D
=250 µA
DS
D
GS
GS
=30 A,
=30A,
R
=0 V
V
=0 V,
=0 V,
G
V
DS
= 1.6 Ω
GS
=12 V,
,
=10V,