bsc031n06ns3g Infineon Technologies Corporation, bsc031n06ns3g Datasheet - Page 4

• Manufacturer Part Number: bsc031n06ns3g
• Description: Optimostm3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev.2.1
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
160
140
120
100
10
10
10
10
10
80
60
40
20
0
DS
-1
3
2
1
0
C
10
0
); T
)
-1
limited by on-state
resistance
C
p
=25 °C; D =0
50
10
0
T
V
C
DS
100
[°C]
[V]
10
1
150
100 µs
1 µs
10 µs
10 ms
1 ms
DC
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
120
100
=f(t
10
10
10
10
80
60
40
20
C
0
-1
-2
-3
0
); V
10
p
0
)
-6
0.02
0.01
0.5
single pulse
0.2
0.05
0.1
GS
≥10 V
10
p
/T
-5
50
10
-4
T
t
C
100
10
p
[°C]
[s]
-3
BSC031N06NS3 G
10
-2
150
10
-1
2009-02-02
200
10
0