bsc046n02ksg Infineon Technologies Corporation, bsc046n02ksg Datasheet - Page 2
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bsc046n02ksg
Manufacturer Part Number
bsc046n02ksg
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSC046N02KSG.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSC046N02KSG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
bsc046n02ksgAUMA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
2)
connection. PCB is vertical in still air.
3)
Maximum ratings, at T
Parameter
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
See figure 3
j
=25 °C, unless otherwise specified
j
=25 °C, unless otherwise specified
Symbol Conditions
Symbol Conditions
P
T
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
j
tot
(BR)DSS
GS(th)
, T
thJC
thJA
DS(on)
G
stg
T
T
R
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
C
A
j
j
GS
DS
DS
DS
GS
GS
GS
thJA
=25 °C
=125 °C
=50 A
DS
=25 °C,
=25 °C
=V
=20 V, V
=20 V, V
=0 V, I
=12 V, V
=2.5 V, I
=4.5 V, I
|>2|I
2
=45 K/W
cooling area
GS
, I
D
|R
D
D
=1 mA
=110 µA
D
D
GS
GS
DS
DS(on)max
2)
=30 A
=50 A
=0 V,
=0 V,
=0 V
2)
,
min.
0.7
20
70
-
-
-
-
-
-
-
-
-
-55 ... 150
55/150/56
Values
Value
0.95
typ.
140
2.8
5.9
3.5
1.9
48
-
-
-
-
-
-
-
BSC046N02KS G
max.
100
100
2.6
1.2
8.7
4.6
62
45
1
-
-
-
Unit
W
°C
Unit
K/W
V
µA
nA
mΩ
Ω
S
2007-10-23