bsc084p03ns3g Infineon Technologies Corporation, bsc084p03ns3g Datasheet - Page 3

• Manufacturer Part Number: bsc084p03ns3g
• Description: Power Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
3)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
g(th)
gd
sw
g
oss
rr
V
f =1 MHz
V
10 V, I
R
V
V
V
T
V
T
V
di
page 3
C
j
GS
DD
DD
GS
DD
GS
R
G
=25 °C
F
=25 °C
=15 V, I
/dt =100 A/µs
=6 Ω
=0 V, V
=-15 V, V
=-15 V, I
=0 to -10 V
=-15 V, V
=0 V, I
D
=-50 A,
F
F
DS
=-50 A,
=|I
D
=-15 V,
GS
GS
=-50 A,
S
|,
=-
=0 V
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
3190
1520
typ.
110
134
4.7
16
33
15
17
43
35
45
50
8
5
7
-
-
-
BSC084P03NS3 G
max.
4785
2280
-1.1
165
200
200
25
50
12
20
11
24
58
46
78
7
-
-
-
Unit
pF
ns
nC
V
nC
A
V
ns
nC
2009-04-08