si7444dp-t1-e3 Vishay, si7444dp-t1-e3 Datasheet

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si7444dp-t1-e3

Manufacturer Part Number
si7444dp-t1-e3
Description
N-channel 40-v D-s Fast Switching Mosfet
Manufacturer
Vishay
Datasheet
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72920
S09-0273-Rev. D, 16-Feb-09
Ordering Information: Si7444DP-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
40
(V)
8
6.15 mm
D
7
D
0.0061 at V
6
D
PowerPAK SO-8
Si7444DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
N-Channel 40-V (D-S) Fast Switching MOSFET
Bottom View
5
DS(on)
D
GS
(Ω)
J
a
1
= 10 V
= 150 °C)
S
a
2
S
3
S
a
5.15 mm
4
I
D
23.6
G
(A)
a
b,c
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
105
(Typ.)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Low Thermal Resistance PowerPAK
• 100 % R
Symbol
Symbol
T
R
R
J
Available
Package with Low 1.07 mm Profile
High Threshold Voltage at High Temperature
V
V
E
I
I
P
, T
DM
thJC
I
I
AS
thJA
GS
DS
AS
D
S
D
stg
G
g
N-Channel MOSFET
Tested
®
Power MOSFET
Typical
10 s
23.6
18.9
4.5
5.4
3.4
1.0
18
52
D
S
- 55 to 150
± 20
100
260
40
60
45
Steady State
Maximum
11.2
1.6
1.9
1.2
1.3
14
23
65
Vishay Siliconix
Si7444DP
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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si7444dp-t1-e3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7444DP-T1-E3 (Lead (Pb)-free) Si7444DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current ...

Page 2

... Si7444DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... S09-0273-Rev. D, 16-Feb-09 10000 8000 6000 4000 2000 100 120 0.040 0.035 0.030 0.025 0.020 0.015 = 25 ° 0.010 0.005 0.000 0.8 1.0 1.2 Si7444DP Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1 ...

Page 4

... Si7444DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0.4 = 250 μ 0.2 - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 1 Temperature ( J Threshold Voltage Limited Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 75 100 125 150 ˚ C) 100 * DS(on D(on) ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72920. Document Number: 72920 S09-0273-Rev. D, 16-Feb- Square Wave Pulse Duration (s) Si7444DP Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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