si7949dp Vishay, si7949dp Datasheet

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si7949dp

Manufacturer Part Number
si7949dp
Description
Dual N-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
si7949dp-T1-E3
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si7949dp-T1-GE3
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si7949dp-T1-GE3
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si7949dp-T1-GE3
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si7949dp-T1-GE3
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Notes
a.
Document Number: 73130
S-42077—Rev. A, 15-Nov-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
−60
−60
(V)
J
8
D1
6.15 mm
ti
Ordering Information: Si7949DP-T1—E3
7
0.080 @ V
0.064 @ V
D1
t A bi
r
PowerPAK SO-8
6
DS(on)
D2
Bottom View
5
J
J
a
a
GS
GS
= 150_C)
= 150_C)
t
D2
a
a
= −4.5 V
= −10 V
(W)
Parameter
Parameter
Dual P-Channel 60-V (D-S) MOSFET
1
a
a
S1
2
G1
a
3
I
S2
D
−4.5
−5
5.15 mm
(A)
4
G2
A
= 25_C UNLESS OTHERWISE NOTED)
Q
Steady State
Steady State
t v 10 sec
L= 0 1 mH
L= 0.1 mH
g
T
T
T
T
New Product
A
A
A
A
26
26
(Typ)
= 25_C
= 70_C
= 25_C
= 70_C
Symbol
Symbol
T
R
R
R
J
V
V
E
I
I
P
P
, T
thJC
DM
thJA
I
I
I
AS
GS
DS
AS
D
D
S
D
D
stg
G
1
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
P-Channel MOSFET
Package with Low 1.07-mm Profile
10 secs
Typical
S
D
−2.9
1
1
3.5
2.2
3.3
−5
−4
27
60
−55 to 150
"20
G
24.2
−60
−25
22
2
Steady State
P-Channel MOSFET
Maximum
Vishay Siliconix
−3.2
−2.6
−1.2
0.94
1.5
4.3
36
85
S
D
2
2
Si7949DP
www.vishay.com
Unit
Unit
_C/W
mJ
_C
C/W
W
W
V
V
A
1

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si7949dp Summary of contents

Page 1

... PowerPAK SO Bottom View Ordering Information: Si7949DP-T1—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current ...

Page 2

... Si7949DP Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... V − Source-to-Drain Voltage (V) SD Document Number: 73130 S-42077—Rev. A, 15-Nov-04 New Product 25_C J 0.8 1.0 1.2 Si7949DP Vishay Siliconix Capacitance 1800 1500 C iss 1200 900 600 C oss 300 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 ...

Page 4

... Si7949DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1 250 mA 0.8 D 0.6 0.4 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product 100 125 150 ...

Page 5

... Package Reliability represent a composite of all qualified locations. http://www.vishay.com/ppg?73130. Document Number: 73130 S-42077—Rev. A, 15-Nov-04 New Product −3 − Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si7949DP Vishay Siliconix − www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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