si7980dp Vishay, si7980dp Datasheet - Page 9

• Manufacturer Part Number: si7980dp
• Description: Dual N-channel 20-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68391
S-83039-Rev. C, 29-Dec-08
10
10
10
10
10
100
10
0.1
10
-2
-3
-4
-5
-6
-1
1
0.0
0
T
J
Source-Drain Diode Forward Voltage
= 150 °C
0.2
25
Reverse Current (Schottky)
V
T
SD
J
- Source-to-Drain Voltage (V)
- Junction Temperature (°C)
0.4
50
V
DS
= 15 V
0.6
75
V
0.01
100
DS
0.1
0.8
100
10
1
0.1
= 20 V
V
DS
* V
Safe Operating Area, Junction-to-Ambient
Single Pulse
T
= 10 V
T
GS
1.0
125
J
A
= 25 °C
= 25 °C
Limited by R
> minimum V
V
DS
1.2
150
- Drain-to-Source Voltage (V)
1
DS(on)
GS
at which R
*
BVDSS
Limited
10
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
is specified
70
56
42
28
14
1 ms
10 ms
100 ms
1 s
10 s
DC
0
0
0 .
0
0
On-Resistance vs. Gate-to-Source Voltage
1
Single Pulse Power, Junction-to-Ambient
100
2
V
0.01
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
Vishay Siliconix
6
Si7980DP
www.vishay.com
I
T
D
T
1
J
J
= 5 A
= 125 °C
8
= 25 °C
10
1
0
9