ssm6618m Silicon Standard Corporation, ssm6618m Datasheet - Page 2

• Manufacturer Part Number: ssm6618m
• Description: N-channel Enhancement-mode Power Mosfet
• Manufacturer: Silicon Standard Corporation

Rev.2.02 3/21/2004
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10 sec.
Electrical Characteristics @ T
Source-Drain Diode
Notes:
DSS
GSS
d(on)
r
d(off)
f
S
SM
fs
BV
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
DSS
/ T
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
Forward On Voltage
Parameter
Parameter
2
2
2
www.SiliconStandard.com
j
j
=25
=70
j
=25
o
o
C)
C)
1
o
C (unless otherwise specified)
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
V
T
D
D
j
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
D
G
D
=7A
=1A
=25°C, I
=V
=3.3 ,V
=15
=0V, I
=10V, I
=4.5V, I
=V
=10V, I
=25V, V
=20V ,V
= ± 20V
=20V
=4.5V
=15V
=0V
=25V
G
GS
=0V , V
Test Conditions
Test Conditions
, I
D
S
D
=250uA
D
D
GS
=7A, V
D
=250uA
GS
GS
=7A
=7A
=5A
=10V
=0V
=0V
S
=1.2V
GS
=0V
D
=1mA
Min.
Min.
25
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.02
18.8
Typ.
Typ.
4.4
645
150
8.4
2.1
4.7
5.2
13
95
6
-
-
-
-
-
-
-
-
-
-
SSM6618M
±100
Max. Units
Max. Units
1.2
30
50
25
30
-
3
1
-
-
7
-
-
-
-
-
-
-
-
-
-
V/°C
nC
nC
nC
m
m
uA
uA
nA
ns
ns
pF
pF
pF
ns
ns
V
V
V
S
A
A
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