dg648bh45 Dynex Semiconductor, dg648bh45 Datasheet - Page 18
![no-image](/images/no-image-200.jpg)
dg648bh45
Manufacturer Part Number
dg648bh45
Description
Gate Turn-off Thyristor
Manufacturer
Dynex Semiconductor
Datasheet
1.DG648BH45.pdf
(19 pages)
- Current page: 18 of 19
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PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
ASSOCIATED PUBLICATIONS
Calculating the junction temperature or power semiconductors
GTO gate drive units
Recommendations for clamping power semiconductors
Use of V
Impoved gate drive for GTO series connections
18/19
TO
, r
T
on-state characteristic
Cathode Aux. Tube
Gate Tube
Title
2 holes Ø3.60
9.6
52
0.05 x 2.0
Package outine type code: H
55
Clamping force: 20kN 10%
15˚
Nominal weight: 820g
Lead length: 505mm
0.1 deep (One in each electrode)
Ø62.85
Ø62.85
Ø100
Application Note
Anode
Number
AN4506
AN4571
AN4839
AN5001
AN5177
Cathode
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