auirf2903zstrr International Rectifier Corp., auirf2903zstrr Datasheet - Page 2

• Manufacturer Part Number: auirf2903zstrr
• Description: Hexfet Power Mosfet
• Manufacturer: International Rectifier Corp.

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Notes:
Static Electrical Characteristics @ T
V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
V
D
S
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
R
Pulse width
C
same charging time as C
from 0 to 80% V
Limited by T
typical repetitive avalanche performance.
(BR)DSS
recommended for use above this value.
G
oss
eff.
= 25 , I
eff. is a fixed capacitance that gives the
/ T
J
AS
Jmax
Jmax
= 75A, V
1.0ms; duty cycle
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
DSS
, starting T
, see Fig.12a, 12b, 15, 16 for
.
Parameter
GS
oss
=10V. Part not
J
while V
= 25°C, L = 0.10mH
Parameter
™
2%.
DS
is rising
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min.
Min.
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
30
0.021
Typ.
Typ.
6320
1980
1100
5930
2010
3050
–––
–––
–––
–––
–––
–––
–––
160
100
–––
–––
–––
†
‡
ˆ
‰ Calculated continuous current based on maximum allowable
1.9
4.5
7.5
51
58
24
48
34
29
37
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
junction temperature. Bond wire current limit is 160A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
All AC and DC test condition based on former Package limited
current of 75A.
160
Max. Units
Max. Units
1020
-200
–––
–––
–––
250
200
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.4
4.0
1.3
20
51
44
k
V/°C
m
μA
nA
nC
nH
nC
ns
pF
ns
V
V
S
A
V
2
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/μs
Pak, when mounted on 1" square PCB (FR-
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 75A**
= 75A**
= 25°C, I
= 25°C, I
= 3.2
= 0V, I
= 10V, I
= V
= 10V, I
= 30V, V
= 30V, V
= 20V
= -20V
= 24V
= 10V
= 15V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
e
e
D
DS
S
F
D
D
DS
DS
= 250μA
GS
GS
= 150μA
= 75A**, V
= 75A**, V
= 75A
= 75A**
= 0V to 24V
= 1.0V, ƒ = 1.0MHz
= 24V, ƒ = 1.0MHz
= 0V
= 0V, T
e
Conditions
D
Conditions
e
= 1mA
**
J
GS
DD
= 125°C
= 15V
f
= 0V
e
G
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G
S
D
D
S